Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDS8840NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 18.6A 8SOIC	12500
CPH6350-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 6A 6CPH	43623
NVGS4111PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 3.7A 6TSOP	6000
NTD4302T4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.4A/68A DPAK	2193
FQP6N40CF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 6A TO220-3	3765000
NVMFS5C423NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 126A 5DFN	0
NTK3139PT5G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 660MA SOT723	104000
FDD18N20LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 16A DPAK	50
NVTFS4C25NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.1A/22.1A 8DFN	1046
NTLJS5D0N03CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 11.2A 6PQFN	840
FDPF045N10A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 67A TO220F	1697
FDB8445 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 70A TO263AB	61611200
NVHL110N65S3F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 30A TO247-3	186
NVTFS5C453NLWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 107A 8WDFN	0
FDD86250-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 50A TO252	616
NDTL01N60ZT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 250MA SOT223	0
FCP165N65S3R0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 19A TO220-3	0
FDC638P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 4.5A SUPERSOT6	422
NTE4151PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 760MA SC89-3	2210
BSS123LT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 170MA SOT23-3	28155

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS