Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
BS270-D74Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 400MA TO92-3	3871
FQU5N50CTU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 4A IPAK	10080
NDS0605 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 180MA SOT-23	0
FCMT199N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 20.2A POWER88	730258000
FQPF65N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 40A TO220F	96
FDB0190N807L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 270A TO263-7	492
FDS6679AZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 13A 8SOIC	12742
FQD13N10TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10A DPAK	631
FDS6375 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 8A 8SOIC	6833
NVTFS4C13NWFTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 14A 8WDFN	0
NVMFS4C05NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 24.7A/116A 5DFN	5000
FDS2572 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 4.9A 8SOIC	0
FDC604P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 5.5A SUPERSOT6	3099
NTLUS3A18PZTAG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 5.1A 6UDFN	633
NTMFS4C290NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.2A/46A 5DFN	3000
FCPF190N65S3L1 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 14A TO220F-3	640475000
FCA47N60-F109 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 47A TO3PN	2582
SSU1N60BTU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 900MA IPAK	0
NTMFS5C442NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 29A/140A 5DFN	7024500
NVMFS5C468NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 5DFN	7

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS