Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDD6630A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 21A TO252	3500
NVMFS5C612NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 38A/250A 5DFN	0
NVMYS014N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A/36A 4LFPAK	26806000
FQP9N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 9A TO220-3	180
FDB52N20TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 52A D2PAK	2033
FDD390N15ALZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 26A DPAK	10000
FCH072N60F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 52A TO247-3	0
FDMC8010ET30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 30A/174A POWER33	3653
NTMFS4845NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 13.7A/115A 5DFN	596518000
FQB19N20CTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 19A D2PAK	423
FQD11P06TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 9.4A DPAK	0
FDD8444L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 16A/50A TO252AA	24682500
FDD6670A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 15A/66A DPAK	7725
2N7000-D26Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 200MA TO92-3	2147483647
FDMC86160 Sanyo Semiconductor/ON Semiconductor	MOSFET N CH 100V 9A POWER33	2931
FQA8N100C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1000V 8A TO3PN	242
MCH6321-TL-E Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 4A 6MCPH	194018000
NTA4153NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 915MA SC75	0
FCP190N60E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 20.6A TO220-3	0
NVMFS6H864NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 6.7A/21A 5DFN	4500

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS