Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FCA20N60-F109 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 20A TO3PN	4500
NVMFS6H864NWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 6.7A/21A 5DFN	150012000
NTA4151PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 760MA SC75	0
FCH104N60F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 37A TO247-3	87650
NVMFS5C460NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 21A/78A 5DFN	0
NTMS10P02R2G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 8.8A 8SOIC	82
NVTFS6H850NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 14.8A/64A 8WDFN	0
MCH3374-TL-E Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 12V 3A SC70FL/MCPH3	35642000
BMS3004-1E Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 75V 68A TO220F-3SG	0
MCH3484-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 4.5A SC70	0
NTMFS5C404NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 52A/370A 5DFN	32
NTMS5P02R2G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.95A 8SOIC	2443
FCP165N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 19A TO220-3	1412
NTLUS4C12NTBG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 6.8A 6UDFN	0
FDMS86101A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 13A/60A 8PQFN	3171
FDP023N08B-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V 120A TO220-3	604
FDB045AN08A0-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V 19A TO263AB	16
FCMT250N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 12A POWER88	0
NVTFS6H880NWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 6.3A/21A 8WDFN	15000
NTMYS014N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A/36A 4LFPAK	290012000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS