Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQD5P20TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 200V 3.7A DPAK	4722
NTTFS4C05NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 12A/75A 8WDFN	0
NVJS4151PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.2A SC88	5496
FDMA520PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 7.3A 6MICROFET	0
RFP70N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 70A TO220-3	940
NVMYS3D5N04CTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 24A/102A LFPAK4	0
FDMC8854 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 15A 8MLP	2927
FCH043N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 75A TO247-3	438
FDD86369-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 90A DPAK	1502
FQP2N90 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 900V 2.2A TO220-3	89
NVF5P03T3G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 3.7A SOT-223	7722
FDC86244 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 2.3A SUPERSOT6	2147483647
FCP067N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 44A TO220	52223200
NVMFS5832NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 21A 5DFN	0
FDA032N08 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V 120A TO3PN	352
NTMFS4931NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 23A/246A 5DFN	1764
HUF76423P3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 35A TO220-3	830
FCA22N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 22A TO3PN	433900
NTD5C648NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22A/91A DPAK	19975000
FCP125N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A TO220-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS