Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IRF530A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 14A TO220-3	204
FDB088N08 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V 120A D2PAK	557
FDMC7696 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 12A/20A 8MLP	0
FDMC510P-F106 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 12A/18A 8WDFN	0
FDMA86265P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 150V 1A 6MICROFET	8581
FDB2710 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 50A D2PAK	970
FDP19N40 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 19A TO220-3	8842000
FDMS7672AS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 19A/42A 8PQFN	2520
NTLUS029N06T6TAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 3.5A 6UDFN	0
FDP3682 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 6A/32A TO220-3	1348
FDA70N20 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 70A TO3PN	290
5HN01SS-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 100MA SMD	0
NTTFS5C670NLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 16A/70A 8WDFN	0
NVTFS5C670NLWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 16A/70A 8WDFN	0
FQD30N06TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22.7A TO252	6276
FDMS8027S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 18A/22A 8PQFN	911
FDT86102LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 6.6A SOT223-4	0
NVD5C434NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 40V 163A DPAK	1204
NTTFS5820NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 11A/37A 8WDFN	0
FDMC86183 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 47A 8PQFN	11553

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS