Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTMFS4936NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 11.6A/79A 5DFN	5000
FDD8896 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 17A/94A TO252AA	22223
FQA16N50-F109 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 16A TO3P	0
NTP7D3N15MC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 12.1/101A TO220	631
NTZS3151PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 860MA SOT563	44115
FQP20N06L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 21A TO220-3	0
FDMC86102L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 7A/18A 8MLP	0
FDMS8460 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 25A/49A 8PQFN	6895
NVMFS5844NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 11.2A 5DFN	0
FDMC2523P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 150V 3A 8MLP	0
FDZ371PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.7A 4WLCSP	0
FDMA410NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 9.5A 6MICROFET	228861
FDMS0310AS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 19A/22A 8PQFN	2955
FQB33N10LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 33A D2PAK	5890
FDMA510PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 7.8A 6MICROFET	3000
NDB5060L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 26A D2PAK	2332
NVMFS6H800NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 30A/224A 5DFN	0
FQT1N80TF-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 200MA SOT223-3	1968
FDD8445 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 70A TO252AA	42010000
NTNS3A65PZT5G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 281MA SOT883	2147483647

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS