Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMS86201 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 120V 11.6A/49A 8PQFN	10815
HUF75329D3ST Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 55V 20A TO252AA	168
FQD9N25TM-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	0
FDS8884 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.5A 8SOIC	1802
FDB029N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 120A D2PAK	8004000
NTP190N65S3HF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 20A TO220-3	800
FDMC86012 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 23A POWER33	2556
FCHD125N65S3R0-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A TO247	1044590
NTMFS4C025NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 20A/69A 5DFN	39
NTTFS6H850NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 11A/68A 8WDFN	0
FDC653N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 5A SUPERSOT6	3177
NTTFS4C02NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 170A 8WDFN	0
FDS6670A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 13A 8SOIC	10847
FDC637AN Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 6.2A SUPERSOT6	0
FCPF11N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 11A TO220F	829
FQD6N60CTM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 4A DPAK	0
FDPF12N50FT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 11.5A TO220F	802
FDD120AN15A0-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 14A DPAK	11937500
NTK3134NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 750MA SOT723	8109
CPH6341-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 5A 6CPH	2094

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS