Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMS8050 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 30V 55A 8PQFN	269296000
FDP032N08-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 75V 120A TO220	0
FDB150N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 57A D2PAK	457
FDP5800 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 14A/80A TO220-3	726
FCP600N60Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7.4A TO220-3	760
FDFMA2P029Z Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.1A 6MICROFET	292342000
FDD86113LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 4.2A/5.5A DPAK	28052500
BSS123 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 170MA SOT23-3	386812
NTTFS4C10NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.2A/44A 8WDFN	0
HUF75542P3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 75A TO220-3	7904800
FDMC86260ET150 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 5.4A/25A PWR33	0
FDMS86520 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 14A/42A 8PQFN	2147483647
FQD5N15TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 4.3A DPAK	358
FQB8P10TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 8A D2PAK	3
FDP150N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 57A TO220-3	9
FQP2P40-F080 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 400V 2A TO220-3	10385000
NTMYS3D5N04CTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 24A/102A LFPAK4	0
FDMS8018 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 30A/120A 8PQFN	2147483647
NTD3055L104T4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A DPAK	75
ATP103-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 55A ATPAK	28646000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS