Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDP085N10A-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 96A TO220-3	83
NVTFS5124PLWFTWG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 2.4A 8WDFN	0
FDB8441 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 28A/120A TO263AB	188754400
NDT014L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 2.8A SOT223-4	2837
NVMFS5C460NWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 19A/71A 5DFN	0
FDS2670 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 3A 8SOIC	5527
FDD1600N10ALZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 6.8A TO252	2500
PCP1402-TD-H Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 1.2A SOT89	2000
NTMTS0D7N04CTXG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 65A/420A 8DFNW	6000
FDD8882 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 12.6/55A TO252AA	58
FCD380N60E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 10.2A DPAK	1529
NTHL190N65S3HF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 20A TO247-3	249
FDMS7694 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 13.2A/20A 8PQFN	1209
NTD4804NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 14.5A/124A DPAK	847
FDP3632 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 12A/80A TO220-3	0
NVMS5P02R2G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.95A 8SOIC	224697500
MVMBF0201NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 300MA SOT-23-3	300042000
BSS84LT7G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 50V 130MA SOT23-3	0
FDMA910PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 9.4A 6MICROFET	400
NTMFS5C423NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 5DFN	723

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS