Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVLUS4C12NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 6.8A 6UDFN	0
FDC3612 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 2.6A SUPERSOT6	0
CPH3457-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 3A 3CPH	87124000
NTMFS5832NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 20A/111A 5DFN	236
FDS8880 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 11.6A 8SOIC	39368
FCH25N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 25A TO247-3	448
NTMFS5C468NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 5DFN	357
FDS6570A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 15A 8SOIC	4445
NVR5198NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 1.7A SOT23-3	0
FCPF9N60NTYDTU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 9A TO220F-3	0
FDPF33N25T Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 33A TO220F	1183
NVMFS5C645NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22A 5DFN	0
FDB86102LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 8.3A/30A TO263	5579600
SFT1445-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 17A TP-FA	1262
FCD600N60Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7.4A DPAK	2666
FDD9510L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 50A DPAK	10784
FDBL0150N80 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 300A 8HPSOF	0
NTNUS3171PZT5G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 150MA SOT1123	224344000
FDD9407L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 100A DPAK	0
IRF634B-FP001 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 8.1A TO220-3	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS