Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDD8780 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 35A TO252AA	2276
FCH041N65EF-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 76A TO247	1637450
NTR1P02LT3G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 1.3A SOT23-3	1279
FDP2D9N12C Sanyo Semiconductor/ON Semiconductor	PTNG 120V N-FET TO220	3200
FDB14AN06LA0-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 67A TO263AB	992
WPH4003-1E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1700V 2.5A TO3PF	0
FDBL0240N100 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 210A 8HPSOF	0
SFT1342-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 12A TP-FA	5206
NVMFS5C468NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 13A/37A 5DFN	0
NTMFS4899NFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.4A/75A 5DFN	0
NTMFS4H02NFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 37A/193A 5DFN	0
FDS4685 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 8.2A 8SOIC	2936
FCH099N65S3-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 30A TO247-3	0
FDI045N10A-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 120A I2PAK	7362000
FDC021N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 6.1A SUPERSOT6	300081000
NVMFS5C430NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 38A/200A 5DFN	0
FDMA430NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 5A 6MICROFET	19
FDMA86251 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 2.4A 6MICROFET	2147483647
NVMFS5C604NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 287A 5DFN	0
FDP10N60NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 10A TO220-3	213

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS