Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTD3055-150T4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 9A DPAK	4318
FQPF20N06L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 15.7A TO220F	10927
FDMC7660 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 20A/40A POWER33	12853
FQPF11N50CF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 11A TO220F	1343000
NTP5864NG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 63A TO220AB	2
FCA35N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 35A TO3PN	65941400
NTK3043NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 210MA SOT723	16233
NDT3055 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 4A SOT-223-4	43477
FQD2N100TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1000V 1.6A DPAK	10948
NTMS4920NR2G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.6A 8SOIC	2171
NVD5C648NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 18A/89A DPAK	40000
FDMS6681Z Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 21.1A/49A 8PQFN	0
NVMFS5C673NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 60V 50A 5DFN	0
FDMS7570S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 28A/49A 8PQFN	2263
NVTFS5C460NLWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 19A/74A 8WDFN	7500
FQT7N10LTF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 1.7A SOT223-4	443
2SK3745LS-1E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1500V 2A TO220F-3FS	109600
FDMC7672S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 14.8A/18A 8MLP	11530
NTMFS5C410NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 46A/300A 5DFN	317760000
FCHD190N65S3R0-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 17A TO247	24312090

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS