Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDB070AN06A0-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 15A TO263AB	8800
NVMFS5C638NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 26A/133A 5DFN	6385
FQD18N20V2TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 15A DPAK	903
NVMYS7D3N04CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 17A/52A 4LFPAK	297115000
FDD5N50NZFTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 3.7A DPAK	2468
NTP011N15MC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 9.8/74.3A TO220	7803200
NTTFS015P03P8ZTAG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 13.4A/47.6A 8DFN	0
HUF75545P3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 75A TO220-3	213
FQB33N10TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 33A D2PAK	70
FQU10N20CTU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 7.8A IPAK	1423
NTMFS5C460NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 5DFN	0
NVC6S5A354PLZT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 4A 6CPH	2276
HUF75344G3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 55V 75A TO247-3	3921800
FQU2N90TU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 900V 1.7A IPAK	8419
FDD850N10L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 15.7A DPAK	86
NTD5865NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 46A DPAK	1828190000
FDS8449 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 7.6A 8SOIC	6805
FQP7P06 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 7A TO220-3	1364
NVBG020N090SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 900V 9.8A/112A D2PAK	1583
FQP27P06 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 27A TO220-3	17134

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS