Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
SI3457DV Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 4A SUPERSOT6	7640
NVMFS5844NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 11.2A 5DFN	0
FQD9N25TM-F080 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	0
NTF5P03T3G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 3.7A SOT223	196
NTMFS4935NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 13A/93A 5DFN	7919
FDD6N50TM-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 6A DPAK	1533
MCH6344-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 2A 6MCPH	300048000
FDD9411L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 25A TO252	553
FDD2582 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 3.7/21A TO252AA	431
NTHL050N65S3HF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 58A TO247-3	450
FDPF12N50T Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 11.5A TO220F	5413000
FDS9431A Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.5A 8SOIC	4679
NVMFS5C682NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 8.8A/25A 5DFN	0
FDMC86259P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 150V 3.2A/13A PWR33	255424000
ATP108-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 70A ATPAK	0
FDB44N25TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 44A D2PAK	0
FDMC86262P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 150V 2A/8.4A 8MLP	11298
FDS4141-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 10.8A 8SOIC	525
NTMYS8D0N04CTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 16A/49A 4LFPAK	0
NTMFS4821NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.8A/58.5A 5DFN	287027000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS