Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FCP150N65F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A TO220-3	635
FDD8778 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 35A TO252AA	25425000
FQB5N50CTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 5A D2PAK	772
FDBL0065N40 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 300A 8HPSOF	0
FDP8874 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 16A/114A TO220-3	1764000
FDC608PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 5.8A SUPERSOT6	340
FDD6637 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 35V 13A/55A DPAK	0
NVTFS5C673NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 13A/50A 8WDFN	0
FDN86246 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 1.6A SUPERSOT3	11926
NVMFS5C404NWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 53A/378A 5DFN	0
FQPF3N80C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 3A TO220F	35
FQB10N50CFTM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 10A D2PAK	15701600
NTMFS5C682NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 25A 5DFN	19500
FCD7N60TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7A DPAK	983
FDN327N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 2A SUPERSOT3	0
NTMFS5H615NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 28A/185A 5DFN	0
FDP18N20F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 18A TO220-3	14142000
FDD8647L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 14A/42A DPAK	19186
FCP22N60N-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 22A TO220-3	0
FQPF8N80C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 8A TO220F	333

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS