Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTMFS4C13NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 7.2A/38A 5DFN	128073500
FDD390N15A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 26A DPAK	395930000
FDMA8878 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9A/10A 6MICROFET	18348
SI4435DY Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 8.8A 8SOIC	15893
NVMFS5C426NWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 41A/235A 5DFN	0
NTHL080N120SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 1200V 44A TO247-3	2112600
NTMFS6D1N08HT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 17A/89A 5DFN	0
FDP032N08B-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 120A TO220-3	1600
FDMS8622 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 4.8A/16.5A 8QFN	300918000
NVMFS015N10MCLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10.5A/54A 5DFN	0
MCH6421-TL-E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 5.5A 6MCPH	25699000
FDA38N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 38A TO3PN	0
FDP4D5N10C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 128A TO220-3	0
NVMFS5C423NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 31A/150A 5DFN	0
FQB47P06TM-AM002 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 47A D2PAK	67
NTLJS3113PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.5A 6WDFN	2238
FDMC8010DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 37A 8PQFN	2326
BSS84 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 50V 130MA SOT23-3	0
FDH210N08 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V TO247-3	435
NTJS3157NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 3.2A SC88/SC70-6	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS