Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMS86202 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 120V 13.5A POWER56	3648
NVD5117PLT4G-VF01 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 11A/61A DPAK	0
FCD3400N80Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 2A DPAK	0
FQD7N10LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 5.8A DPAK	36442500
FQD7N30TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 5.5A DPAK	1753
FDP027N08B-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 120A TO220-3	390
FQP3N50C-F080 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 1.8A TO220-3	65913000
NVMFS5C450NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 110A 5DFN	0
FDD86567-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 100A DPAK	0
FCH023N65S3L4 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 75A TO247	875
FCPF600N60ZL1 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 7.4A TO220F	0
NDP6060 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 48A TO220-3	10248000
NTMFS08N003C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 22A/147A POWER56	0
FDMS8820 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 28A/116A 8PQFN	2990
MCH3475-TL-E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 1.8A SC70	905
ATP112-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 25A ATPAK	779
FDD3672-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 44A TO252AA	42060000
NVMFS5C670NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 17A/71A 5DFN	0
NVTFS4C25NWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.1A/22.1A 8DFN	833
MCH3479-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 3.5A SC70	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS