Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NTP150N65S3HF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A TO220-3	773800
FDMA420NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 5.7A 6MICROFET	1984
FQP11N40C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 10.5A TO220-3	934
FCH76N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 76A TO247-3	394
FDMS7660 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 25A/42A 8PQFN	3002
NDFPD1N150CG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1500V 100MA TO220-3	0
FCPF20N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 20A TO220F	996
BSS138L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 200MA SOT23-3	138397
FQT4N25TF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 830MA SOT223-4	2581
FCH76N60NF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 72.8A TO247-3	19722050
FDP038AN06A0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 17A/80A TO220-3	659
NVMFS6H848NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 13A/57A 5DFN	10500
NVD5C454NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 20A/84A DPAK	0
FDC5612 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 4.3A SUPERSOT6	35
FDPF4N60NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 3.8A TO220F	985
NVMTS0D7N06CLTXG Sanyo Semiconductor/ON Semiconductor	AFSM T6 60V LL NCH	0
FDP075N15A-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 130A TO220-3	2756
NVHL080N120SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 1200V 44A TO247-3	112
FDS86140 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 11.2A 8SOIC	163560000
CPH3355-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 2.5A 3CPH	4296

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS