Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVMFS5C430NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 38A/200A 5DFN	10000
FQA170N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 170A TO3PN	331
FDMA86108LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 2.2A 6MICROFET	3832
NTH027N65S3F-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 75A TO247-3	34900
FDMS86163P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 7.9A/50A 8PQFN	147
FDMS86250 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 6.7A/20A 8PQFN	0
FDMC8321LDC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 27A DLCOOL33	2875
NVMFS5C406NLWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 53A/362A 5DFN	0
FDY101PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 150MA SC89-3	6
FDMS86322 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 13A/60A 8PQFN	0
FDMS7692 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 14A/28A 8PQFN	4069
NVMFS5C604NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 40A/287A 5DFN	0
NVMFS5C682NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 8.8A/25A 5DFN	0
FDD3N50NZTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 2.5A DPAK	284
FDMS7650 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 36A/100A 8PQFN	0
FQPF16N25C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 15.6A TO220F	0
FDD3672 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 6.5/44A TO252AA	276
BSS123W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 170MA SC70	828
NTP6412ANG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 58A TO220AB	203
NTR5103NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 260MA SOT23-3	184613

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS