Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMC008N08C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 80V 60A 8PQFN	234000
STDV3055L104T4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A DPAK	8314
FDPF18N50T Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 18A TO220F	2884
FQU13N06LTU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 11A IPAK	35400
SI3443DV Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 4A SUPERSOT6	9269
NVMFS5C612NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 36A/235A 5DFN	0
FDMC4435BZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 8.5A/18A 8MLP	4256
NVMFS5C646NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 20A/93A 5DFN	0
MCH3333A-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 2A SC70FL/MCPH3	3055
NDT452AP Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 5A SOT-223-4	5964
FCP11N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 10.8A TO220-3	495
FDMS86368-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 80A POWER56	878
FDD2572 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 4A/29A TO252AA	6055
FQA46N15 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 50A TO3P	0
NVATS5A112PLZT4G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 27A ATPAK	2335
NTTFS010N10MCLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10.7A/50A 8WDFN	596624000
FDS4480 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 10.8A 8SOIC	1525
NTTFS015N04CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 9.4A/27A 8WDFN	10500
FDP120N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 74A TO220-3	1024
NVMFS5C442NAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 29A/140A 5DFN	740

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS