Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQT13N06TF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 2.8A SOT223-4	632912000
NTHS5443T1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.6A CHIPFET	235512000
FDMS86350ET80 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 25A/198A POWER56	7215
FDMS7572S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 23A/49A 8PQFN	7040
FQD1N60CTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 1A DPAK	1253
IRLM120ATF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 2.3A SOT223-4	8000
FQPF2N80 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 1.5A TO220F	939
NTMFS5C670NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 17A/71A 5DFN	4995
NDT451AN Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 7.2A SOT-223-4	17276
NTMFS5H409NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 41A/270A 5DFN	0
NVMFS5C410NLAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 50A/330A 5DFN	0
FDP047N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 120A TO220-3	932
FQU1N60CTU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 1A IPAK	425015120
NTB6410ANT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 76A D2PAK	7
FDD3682 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 5.5/32A TO252AA	750
NTHS4166NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 4.9A CHIPFET	1716186000
NVATS5A106PLZT4G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CHANNEL 40V 33A ATPAK	2847
NTMFS5844NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 11.2A 5DFN	0
ATP304-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 100A ATPAK	0
FDB024N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 120A D2PAK	32

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS