Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQD19N10LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 15.6A DPAK	797
6HP04MH-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 370MA SC70FL	4958
FQB9P25TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 250V 9.4A D2PAK	0
NDS351AN Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 1.4A SUPERSOT3	7299
NTMFS5C604NLT1G-UIL3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 40A/287A 5DFN	0
FDY302NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 600MA SC89-3	27357
NVGS3130NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 4.2A 6TSOP	0
NVTFS5C460NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 19A/74A 8WDFN	0
FDD6N50TM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 6A DPAK	1
FDB15N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 15A D2PAK	800
NTTFS4824NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.3A/69A 8WDFN	1300
NVD5C684NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 60V 38A DPAK	0
FQPF7N80C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 6.6A TO220F	865
BS170-D74Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 500MA TO92-3	596546000
FDBL86361-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 300A 8HPSOF	0
NTMFS5H400NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 46A/330A 5DFN	8884500
FDMS86500DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 29A DLCOOL56	74359000
FDS8447 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 12.8A 8SOIC	1500
FCU360N65S3R0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V IPAK	0
FDPF5N50NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 4.5A TO220F	715

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS