Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FCP16N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 16A TO220-3	1000
NVMYS2D2N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 31A/185A LFPAK4	0
FDD4685 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 8.4A/32A DPAK	4923
FQP34N20 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 31A TO220-3	7682000
HUF75652G3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 75A TO247-3	0
FQP7N20 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 6.6A TO220-3	1468
FDB9406L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 110A D2PAK	0
FDD8796 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 35A TO252AA	92
FDD86252 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 5A/27A DPAK	1907
FQP13N50C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 13A TO220-3	739
NTHL060N090SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 900V 46A TO247-3	434
2N7000-D74Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 200MA TO92-3	182458000
FCD9N60NTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 9A DPAK	3124
FDD6030L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 12A/50A DPAK	635000
FDC3512 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 3A SUPERSOT6	0
NVMFS5C612NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 38A/250A 5DFN	0
FQPF13N06L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 10A TO220F	16057000
IRFU220BTU-AM002 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 4.6A IPAK	10080
FQPF9N90CT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 900V 8A TO220F	495
NTMFSC0D9N04CL Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 8PQFN	192

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS