Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDMS7660AS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 26A/42A 8PQFN	4592
NTMFS5C442NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 27A/130A 5DFN	0
FDB3682 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 6A/32A TO263	16465600
NTTFS5116PLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 5.7A 8WDFN	0
NVR1P02T1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 1A SOT-23-3	0
FCD900N60Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 4.5A TO252	17982500
FDA59N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 59A TO3PN	1950
NVMFS5C466NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 16A/52A 5DFN	0
NTMFS4C09NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9A 5DFN	0
NVD6824NLT4G-VF01 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 8.5A/41A DPAK	0
FDS6680AS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 11.5A 8SOIC	2378
NTTFS4C10NTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.2A/44A 8WDFN	0
FDP15N40 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 15A TO220-3	780
FDC642P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 4A SUPERSOT6	12408
FDN304PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 2.4A SUPERSOT3	35172
NVMFS5C646NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 20A/93A 5DFN	0
NTMFS4852NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 16A/155A 5DFN	2634
FQU11P06TU Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 9.4A IPAK	6013
FDC638APZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 4.5A SUPERSOT6	18659
FCH041N65F-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 76A TO247	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS