Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQD8P10TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK	0
FDPF16N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 16A TO220F	612
NTMFS5C628NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 5DFN	0
NTTFS5116PLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 5.7A 8WDFN	0
FDMS86152 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 14A/45A POWER56	83418000
NVMFS5A160PLZT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 15A/100A 5DFN	0
NVBLS0D5N04M8TXG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 300A 8HPSOF	21142000
NVD5C478NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 14A/43A DPAK	7500
NVTFS5C680NLWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 7.82A/20A 8WDFN	0
NTHD4P02FT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 2.2A CHIPFET	2375
FDD86367-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 100A DPAK	984
FDB9403-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 110A TO263AB	1924800
FQD2P40TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 400V 1.56A DPAK	2147483647
NTTFS4821NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 7.5A/57A 8WDFN	12142
FDMS10C4D2N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 17A 8PQFN	1798
FQPF27P06 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 17A TO220F	0
NVD5C486NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 9.2A/23A DPAK	15000
FDP8880 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 11A/54A TO220-3	8068800
FQP45N15V2 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 45A TO220-3	75
NTP5D0N15MC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 15A/139A TO220	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS