Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDB9409L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 90A D2PAK	0
FDMC013P030Z Sanyo Semiconductor/ON Semiconductor	MOSFET P-CHANNEL 30V 54A 8MLP	2259
FDB12N50TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 11.5A D2PAK	843
FDPF5N50UT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 4A TO220F	4322000
FQP10N20C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 9.5A TO220-3	261
NTE4153NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 915MA SC89-3	0
FCMT125N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A 4PQFN	3000
BSS138 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 220MA SOT23-3	92
FDMS86520L Sanyo Semiconductor/ON Semiconductor	MOSFET N CH 60V 13.5A 8PQFN	3336
BS170-D26Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 500MA TO92-3	0
FDD9409-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 90A DPAK	9
FDP050AN06A0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 18A/80A TO220-3	645
FCP650N80Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 10A TO220	6572400
NTMFS4C35NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 12.4A 5DFN	14976000
FCU900N60Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 4.5A IPAK	17353600
NTTFS4930NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 4.5A/23A 8WDFN	127331500
FQPF630 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 6.3A TO220F	18874000
FDC610PZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 4.9A SUPERSOT6	18697
FDS6675BZ Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 11A 8SOIC	3035
FCP125N65S3R0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A TO220-3	5791600

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS