Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDD6635 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 35V 15A/59A DPAK	31912500
NVGS5120PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 1.8A 6TSOP	243000
NTD5C668NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 15A/48A DPAK	7500
FDS6690A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 11A 8SOIC	15321
NTMFS5C404NLTT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 52A/370A 5DFN	0
FQB34P10TM Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 33.5A D2PAK	0
FQA28N15 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 33A TO3PN	100
FQD8P10TM-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK	1964
FDD7N25LZTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 6.2A DPAK	2432
NVMFS5C604NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 287A 5DFN	0
NTGS3446T1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 2.5A 6TSOP	2147483647
NTMFS4955NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9.7A/48A 5DFN	396625000
NTBG160N120SC1 Sanyo Semiconductor/ON Semiconductor	TRANS SJT N-CH 1200V 19.5A D2PAK	7905600
FDS6690AS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10A 8SOIC	0
FCH023N65S3-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 75A TO247	0
FDMC6686P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 18A/56A 8PQFN	6000
FQT4N20LTF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 850MA SOT223-4	1747
FDMC610P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 12V 80A POWER33	7156
NDP7060 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 75A TO220-3	681
NVE4153NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 915MA SC89	6000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS