Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDY300NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 600MA SC89-3	16576
FDMC7660DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 30A/40A DLCOOL33	2583
NVMFS5C604NLWFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 40A/287A 5DFN	0
FDD16AN08A0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V 9A/50A DPAK	134
FDWS9509L-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 65A 8DFN	2341
FDBL9406-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 240A 8HPSOF	603
NVS4409NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 700MA SC70-3	2147483647
FDB9406-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 110A D2PAK	1590
FQD2N60CTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 1.9A DPAK	5303
2N7002KT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 320MA SOT23-3	0
NTMS4177PR2G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 6.6A 8SOIC	0
FDS8878 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.2A 8SOIC	6839
FDMS86380-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 50A POWER56	0
NTTFS5C454NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 20A/85A 8WDFN	240
FDMC86102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 7A/20A POWER33	3
FQB5N60CTM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 4.5A D2PAK	7702400
NVTFS6H860NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 8A/30A 8WDFN	0
NVTFS5C658NLWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 109A 8WDFN	0
FDMS8350L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 47A/200A POWER56	2946
HUF75645P3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 75A TO220-3	1127

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS