Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVMFS5A160PLZWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 15A/100A 5DFN	0
NTR5198NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 1.7A SOT23-3	0
FDMS039N08B Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 19.4A/100A 8PQFN	2272
FDMS86381-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 30A POWER56	0
FCB20N60TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 20A D2PAK	0
FDS86106 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 3.4A 8SOIC	139077500
FDPF8N60ZUT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 6.5A TO220F	9871000
NTMFS4983NFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 22A/106A 5DFN	51958
NVR5198NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 1.7A SOT23-3	161
NTMFS6B14NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10A/50A 5DFN	1499
FCD620N60ZF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7.3A DPAK	2500
SFT1341-C-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 10A DPAK/TP-FA	0
2V7002LT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 115MA SOT23-3	17838
NTR3A30PZT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3A SOT23-3	904
FDMS86300DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 24A/76A DLCOOL56	27815
FQP17P10 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 16.5A TO220-3	1409
FDMC8321L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 22A/49A POWER33	0
FQT7N10TF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 1.7A SOT223-4	1566
FDC658P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 4A SUPERSOT6	98
FQA140N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 140A TO3PN	829

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS