Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQP47P06 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 47A TO220-3	0
FDB14N30TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 14A D2PAK	31561600
FDN352AP Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 1.3A SUPERSOT3	0
MVGSF1N02LT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 750MA SOT23-3	5473
FDD86369 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 90A DPAK	4523
NVF2955T1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 2.6A SOT223	0
FQA90N15 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 90A TO3PN	439
RFP50N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 50A TO220-3	1263
FCA47N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 47A TO3PN	1399
FCP360N65S3R0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 10A TO220-3	0
FDD5612 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 5.4A TO252-3	175
FDD6612A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9.5A/30A DPAK	462
FQB7P20TM-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 200V 7.3A D2PAK	385
CPH3348-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 12V 3A 3CPH	3141
NVMYS4D6N04CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 21A/78A LFPAK4	0
MCH6437-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 7A SC88FL/MCPH6	0
FDMS1D5N03 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 218A 8PQFN	1646
RFD16N05LSM9A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 16A TO252AA	1480
2N7002LT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 115MA SOT23-3	12
FDD5614P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 15A TO252	27

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS