Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FDS4675 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 11A 8SOIC	0
FDP39N20 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 39A TO220-3	35710000
FCMT180N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 17A POWER88	1657000
FDD86326 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 8A/37A DPAK	2989
NVD3055-094T4G-VF01 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A DPAK	115000
FQD3P50TM-AM002BLT Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 500V 2.1A TO252	0
MMBF170 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 500MA SOT23	10817
NVGS4141NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 3.5A 6TSOP	0
FDMS8350LET40 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 49A/300A POWER56	6000
BVSS84LT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 50V 130MA SOT23-3	2147483647
ATP104-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 75A ATPAK	2310
NTD4965NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 13A/68A DPAK-3	2153
NTB190N65S3HF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 20A D2PAK-3	0
FDMC010N08C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 11A/51A POWER33	21000
NTHL110N65S3F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 30A TO247-3	393
NVTFS5C466NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 51A 8WDFN	62
FDB035AN06A0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22A/80A D2PAK	3304
FCP20N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 20A TO220-3	4304
FDC602P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 5.5A SUPERSOT6	10312
FDD4141 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 10.8A/50A DPAK	23

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS