Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQD4N25TM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 3A DPAK	2347500
NDT2955 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 2.5A SOT-223-4	0
FQD16N25CTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 16A DPAK	0
NVMFS5C423NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 31A/150A 5DFN	0
FDS6699S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 21A 8SOIC	2432
NTR4171PT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 2.2A SOT23-3	0
BUZ11-NR4941 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 30A TO220-3	3631
FQL40N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 40A TO264-3	287
FQA9P25 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 250V 10.5A TO3P	0
FDN302P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 2.4A SUPERSOT3	45862
NTMYS4D6N04CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 21A/78A LFPAK4	0
FDD6N20TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 4.5A DPAK	8685
NTP6410ANG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 76A TO220AB	0
FDPF55N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 55A TO220F	1753
FDP020N06B-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 120A TO220-3	1094
NTD5862NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 98A DPAK	181740000
FQPF9N50CF Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 9A TO220F	695
FQP3P20 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 200V 2.8A TO220-3	1055
FDB38N30U Sanyo Semiconductor/ON Semiconductor	MOSFET N CH 300V 38A D2PAK	1956
FQU20N06LTU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 17.2A IPAK	47875040

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS