Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
SFT1345-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 100V 11A TP-FA	339
FDPF8D5N10C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 76A TO220F	1000
FDMS86200DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 9.3A DLCOOL56	208769000
NTMYS7D3N04CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 17A/52A 4LFPAK	2996
FDB86360-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 110A D2PAK	119
NTMFS5H610NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 12A 44A 5DFN	14644500
NDS355N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 1.6A SUPERSOT3	9
ATP101-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 25A ATPAK	1413
FDD3N40TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 2A DPAK	185460000
FQD12N20TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 9A DPAK	5597500
FDC8878 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8A/8A SUPERSOT6	6570
FDN361BN Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 1.4A SUPERSOT3	8172
NTR4101PT1H Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 1.8A SOT23-3	3786
BSS138W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 210MA SC70	2147483647
NTTFS005N04CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 17A/69A 8WDFN	0
FDC634P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 3.5A SUPERSOT6	435
NVMFS6H836NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 15A/74A 5DFN	1500
NTLUS3A90PZTBG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 2.6A 6UDFN	0
NVTFWS005N04CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 17A/69A 8WDFN	40500
MVSF2N02ELT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 2.8A SOT23-3	71793000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS