Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVF3055L108T1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 3A SOT223	19232
NTD25P03LT4G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 25A DPAK	113
FQU2N50BTU-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 1.6A IPAK	10080
NVD3055-150T4G-VF01 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 9A DPAK	1034
FDD3690 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 22A DPAK	476615000
FDP2710-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 4A TO220-3	800
FDBL0260N100 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 200A 8HPSOF	0
NTMFS5C646NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 20A/93A 5DFN	0
FDPF14N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 14A TO220F	18000
FDMA905P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 12V 10A 6MICROFET	1498121000
2N7002LT7G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 115MA SOT23-3	87500
FCB199N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 14A D2PAK	80011200
NVD5C486NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 9.8A/24A DPAK	7500
NVMFS5C456NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 20A/80A 5DFN	1730
FDMS0306AS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 26A/49A 8PQFN	0
HUF75345G3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 55V 75A TO247-3	535
NTMFS5C450NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 24A/102A 5DFN	15154500
FCB260N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 12A D2PAK	800
FQN1N60CTA Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 300MA TO92-3	17222000
FDS6681Z Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 20A 8SOIC	58104

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS