Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVMFS5C456NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 87A 5DFN	0
NVTR0202PLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 400MA SOT23	421
BVSS123LT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 170MA SOT23-3	11292
NVMFS5A140PLZWFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 20A/140A 5DFN	0
NTD6414ANT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 32A DPAK	8642
NTP2955G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 2.4A TO220AB	19634000
FDD8880 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 13A/58A TO252AA	127
FQP70N10 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 57A TO220-3	840
FDS5670 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 10A 8SOIC	2643
FDS86242 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 4.1A 8SOIC	5232
FQA30N40 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 30A TO3PN	269
NTTFS5826NLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 8A 8WDFN	0
NTMFS4833NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 16A/156A 5DFN	24995
FDN359BN Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 2.7A SUPERSOT3	158289000
NTMFS4833NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 16A/156A 5DFN	2147483647
NTMFS5H400NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 46A/330A 5DFN	0
FDC642P-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 4A SUPERSOT6	5188
FDS9435A Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 5.3A 8SOIC	4950
FDS8638 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 18A 8SOIC	68107500
FDBL9401-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 300A 8HPSOF	3658

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS