Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FCPF9N60NT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 9A TO220F	8412000
NTGS3443T1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 20V 2.2A 6TSOP	2147483647
FQPF5N40 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 3A TO220F	105804000
NTMS4807NR2G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9.1A 8SOIC	48762500
FDT439N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 6.3A SOT223-4	20001
FDMS86102LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 7A/22A 8PQFN	10283
NVMFS5113PLWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 10A/64A 5DFN	0
NVMFS5C450NWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 24A/102A 5DFN	0
FDMC86240 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 4.6A/16A 8MLP	7580
NVMFS5C628NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 28A/150A 5DFN	0
FDB28N30TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 28A D2PAK	4
FQD7N20LTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 5.5A DPAK	1055000
NTHL040N65S3F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 65A TO247-3	863
NTTFS4C25NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 5A/27A 8WDFN	3480
NTMFS4H01NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 25V 54A/334A 5DFN	0
FDB3632 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 12A/80A D2PAK	675
FCH47N60F-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 47A TO247-3	438900
FDMS7672 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 19A/28A 8PQFN	20
NTD6416ANT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 17A DPAK	2668
FDS8817NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 15A 8SOIC	1003

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS