Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6520ENJTL ROHM Semiconductor	MOSFET N-CH 650V 20A LPTS	100
RD3P200SNFRATL ROHM Semiconductor	MOSFET N-CH 100V 20A TO252	4563
R6015FNX ROHM Semiconductor	MOSFET N-CH 600V 15A TO-220FM	702
RQ5C035BCTCL ROHM Semiconductor	MOSFET P-CHANNEL 20V 3.5A TSMT3	6078
RQ3E150BNTB ROHM Semiconductor	MOSFET N-CH 30V 15A 8HSMT	26
R6008FNJTL ROHM Semiconductor	MOSFET N-CH 600V 8A LPTS	1751
TT8U2TR ROHM Semiconductor	MOSFET P-CH 20V 2.4A 8TSST	850
R6511KNJTL ROHM Semiconductor	MOSFET N-CH 650V 11A LPTS	90
RXH070N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 7A 8SOP	2335
SCT3105KLHRC11 ROHM Semiconductor	SICFET N-CH 1200V 24A TO247N	883
US5U29TR ROHM Semiconductor	MOSFET P-CH 20V 1A TUMT5	0
RD3H200SNFRATL ROHM Semiconductor	MOSFET N-CH 45V 20A TO252	2344
R5009ANJTL ROHM Semiconductor	MOSFET N-CH 500V 9A LPTS	0
RQ3E100MNTB1 ROHM Semiconductor	MOSFET N-CH 30V 10A HSMT8	5286
2SK3541T2L ROHM Semiconductor	MOSFET N-CH 30V 100MA VMT3	332364
R6025JNXC7G ROHM Semiconductor	MOSFET N-CH 600V 25A TO220FM	1992
RHU003N03T106 ROHM Semiconductor	MOSFET N-CH 30V 300MA UMT3	1849
RJ1U330AAFRGTL ROHM Semiconductor	MOSFET N-CH 250V 33A LPTS	876
RD3U080CNTL1 ROHM Semiconductor	MOSFET N-CH 250V 8A TO252	2224
SCT2080KEHRC11 ROHM Semiconductor	SICFET N-CH 1200V 40A TO247N	841

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS