Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
SCT3022KLGC11 ROHM Semiconductor	SICFET N-CH 1200V 95A TO247N	698
RK7002BMT116 ROHM Semiconductor	MOSFET N-CH 60V 250MA SST3	90495
RUF015N02TL ROHM Semiconductor	MOSFET N-CH 20V 1.5A TUMT3	9562
RUF025N02TL ROHM Semiconductor	MOSFET N-CH 20V 2.5A TUMT3	8685
RD3P100SNTL1 ROHM Semiconductor	MOSFET N-CH 100V 10A TO252	3464
R6024KNJTL ROHM Semiconductor	MOSFET N-CHANNEL 600V 24A LPTS	118
RD3L140SPFRATL ROHM Semiconductor	MOSFET P-CH 60V 14A TO252	3421
RW1C015UNT2R ROHM Semiconductor	MOSFET N-CH 20V 1.5A 6WEMT	0
RS1E350BNTB ROHM Semiconductor	MOSFET N-CH 30V 35A 8HSOP	1899
RSJ650N10TL ROHM Semiconductor	MOSFET N-CH 100V 65A LPTS	1139
RSE002N06TL ROHM Semiconductor	MOSFET N-CH 60V 250MA EMT3	1400
RJU002N06T106 ROHM Semiconductor	MOSFET N-CH 60V 200MA UMT3	23636
RQ1A070APTR ROHM Semiconductor	MOSFET P-CH 12V 7A TSMT8	2980
R6007JNJGTL ROHM Semiconductor	MOSFET N-CH 600V 7A LPTS	1100
RQ5H020TNTL ROHM Semiconductor	MOSFET N-CH 45V 2A TSMT3	4173
R8005ANJFRGTL ROHM Semiconductor	MOSFET N-CH 800V 5A LPTS	1800
RV1C002UNT2CL ROHM Semiconductor	MOSFET N-CH 20V 150MA VML0806	0
RTL020P02TR ROHM Semiconductor	MOSFET P-CH 20V 2A TUMT6	3853
R6020FNX ROHM Semiconductor	MOSFET N-CH 600V 20A TO220FM	497
RSJ400N06FRATL ROHM Semiconductor	MOSFET N-CH 60V 40A LPTS	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS