Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6012ANJTL ROHM Semiconductor	MOSFET N-CH 600V 12A LPTS	0
RQ5L030SNTL ROHM Semiconductor	MOSFET N-CH 60V 3A TSMT3	4463
SCT3080KW7TL ROHM Semiconductor	TRANS SJT N-CH 1200V 30A TO263-7	1000
RQ7E055ATTCR ROHM Semiconductor	MOSFET P-CH 30V 5.5A TSMT8	4785
RD3S075CNTL1 ROHM Semiconductor	MOSFET N-CH 190V 7.5A TO252	991
RSD201N10TL ROHM Semiconductor	MOSFET N-CH 100V 20A CPT3	2147
RD3L03BATTL1 ROHM Semiconductor	PCH -60V -35A POWER MOSFET - RD3	0
RTR030P02HZGTL ROHM Semiconductor	MOSFET P-CH 20V 3A TSMT3	2418
RUM003N02T2L ROHM Semiconductor	MOSFET N-CH 20V 300MA VMT3	23312
R6004KNJTL ROHM Semiconductor	MOSFET N-CHANNEL 600V 4A TO263	1000
RSE002P03TL ROHM Semiconductor	MOSFET P-CH 30V 200MA EMT3	1729
RSH125N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 12.5A 8SOP	0
RJU002N06FRAT106 ROHM Semiconductor	MOSFET N-CH 60V 200MA UMT3	7576
RS1G300GNTB ROHM Semiconductor	MOSFET N-CH 40V 30A 8HSOP	1933
RTQ040P02TR ROHM Semiconductor	MOSFET P-CH 20V 4A TSMT6	353
RZR040P01TL ROHM Semiconductor	MOSFET P-CH 12V 4A TSMT3	9926
RQ6A050ZPTR ROHM Semiconductor	MOSFET P-CH 12V 5A TSMT6	2860
RHK005N03T146 ROHM Semiconductor	MOSFET N-CH 30V 500MA SMT3	1249
RQ6E085BNTCR ROHM Semiconductor	MOSFET N-CH 30V 8.5A SOT457	971
RSH065N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 6.5A 8SOP	4879

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS