Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RS1E320GNTB ROHM Semiconductor	MOSFET N-CH 30V 32A 8HSOP	2350
RZM001P02T2L ROHM Semiconductor	MOSFET P-CH 20V 100MA VMT3	49190
RU1C001ZPTL ROHM Semiconductor	MOSFET P-CH 20V 100MA UMT3F	5
RTQ030P02TR ROHM Semiconductor	MOSFET P-CH 20V 3A TSMT6	0
R6011ENJTL ROHM Semiconductor	MOSFET N-CH 600V 11A LPTS	445
RE1L002SNMGTL ROHM Semiconductor	MOSFET N-CH 60V 250MA EMT3F	0
RD3L080SNTL1 ROHM Semiconductor	MOSFET N-CH 60V 8A TO252	2542
R5011FNX ROHM Semiconductor	MOSFET N-CH 500V 11A TO-220FM	418
RQ7G080ATTCR ROHM Semiconductor	PCH -40V -8A SMALL SIGNAL POWER	50
RQ6C050UNTR ROHM Semiconductor	MOSFET N-CH 20V 5A TSMT6	11030
RQ5E030RPTL ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT3	2193
RRQ030P03TR ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT6	2991
RSQ030P03TR ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT6	0
RSH070P05TB1 ROHM Semiconductor	MOSFET P-CH 45V 7A 8SOP	3552
RCD080N25TL ROHM Semiconductor	MOSFET N-CH 250V 8A CPT3	3269
SCT3080AW7TL ROHM Semiconductor	TRANS SJT N-CH 650V 29A TO263-7	1035
R6507KNJTL ROHM Semiconductor	MOSFET N-CH 650V 7A LPTS	80
R6020KNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 20A TO247	572
RRF015P03GTL ROHM Semiconductor	MOSFET P-CH 30V 1.5A TUMT3	3172
RSJ400N10FRATL ROHM Semiconductor	MOSFET N-CH 100V 40A LPTS	817

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS