Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6012JNXC7G ROHM Semiconductor	MOSFET N-CH 600V 12A TO220FM	44
RQ5L020SNTL ROHM Semiconductor	MOSFET N-CH 60V 2A TSMT3	4438
RE1C001UNTCL ROHM Semiconductor	MOSFET N-CH 20V 100MA EMT3F	0
RSM002P03T2L ROHM Semiconductor	MOSFET P-CH 30V 200MA VMT3	15098
R5007FNX ROHM Semiconductor	MOSFET N-CH 500V 7A TO220FM	349
RSQ035N03TR ROHM Semiconductor	MOSFET N-CH 30V 3.5A TSMT6	8891
RSD140P06TL ROHM Semiconductor	MOSFET P-CH 60V 14A CPT3	3190
RD3T050CNTL1 ROHM Semiconductor	MOSFET N-CH 200V 5A TO252	1693
RW1A013ZPT2R ROHM Semiconductor	MOSFET P-CH 12V 1.5A 6WEMT	5754
RQ6C065BCTCR ROHM Semiconductor	MOSFET P-CH 20V 6.5A TSMT6	2
R6015KNJTL ROHM Semiconductor	MOSFET N-CH 600V 15A LPTS	718
RCD100N19TL ROHM Semiconductor	MOSFET N-CH 190V 10A CPT3	1163
RTR025P02TL ROHM Semiconductor	MOSFET P-CH 20V 2.5A TSMT3	2092
SCT3040KW7TL ROHM Semiconductor	TRANS SJT N-CH 1200V 56A TO263-7	994
RSR025N03TL ROHM Semiconductor	MOSFET N-CH 30V 2.5A TSMT3	3524
RSD050N10TL ROHM Semiconductor	MOSFET N-CH 100V 5A CPT3	900
RQ6E050ATTCR ROHM Semiconductor	MOSFET P-CH 30V 5A TSMT6	5006
RSJ250P10FRATL ROHM Semiconductor	MOSFET P-CH 100V 25A LPTS	2942
R6004ENX ROHM Semiconductor	MOSFET N-CH 600V 4A TO220FM	132
RSL020P03FRATR ROHM Semiconductor	MOSFET P-CH 30V 2A TUMT6	2868

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS