Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RQ5A040ZPTL ROHM Semiconductor	MOSFET P-CH 12V 4A TSMT3	4093
RZY200P01TL ROHM Semiconductor	MOSFET P-CH 12V 20A TCPT3	0
R6030ENZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 30A TO247	26
QS5U16TR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT5	0
RSD080P05TL ROHM Semiconductor	MOSFET P-CH 45V 8A CPT3	0
RJP020N06T100 ROHM Semiconductor	MOSFET N-CH 60V 2A MPT3	597
RD3H160SPFRATL ROHM Semiconductor	MOSFET P-CH 45V 16A TO252	2160
RQ6L020SPTCR ROHM Semiconductor	MOSFET P-CH 60V 2A TSMT6	1195
RSS100N03FRATB ROHM Semiconductor	MOSFET N-CH 30V 10A 8SOP	1779
RCD100N20TL ROHM Semiconductor	MOSFET N-CH 200V 10A CPT3	0
R6007JND3TL1 ROHM Semiconductor	MOSFET N-CH 600V 7A TO252	2520
RF4E070GNTR ROHM Semiconductor	MOSFET N-CH 30V 7A HUML2020L8	1607
RD3L150SNFRATL ROHM Semiconductor	MOSFET N-CH 60V 15A TO252	2406
QS5U26TR ROHM Semiconductor	MOSFET P-CH 20V 1.5A TSMT5	0
RQ3L050GNTB ROHM Semiconductor	MOSFET N-CHANNEL 60V 12A 8HSMT	9
RSS060P05FRATB ROHM Semiconductor	MOSFET P-CH 45V 6A 8SOP	3868
2SK2731T146 ROHM Semiconductor	MOSFET N-CH 30V 200MA SMT3	5164
RTR040N03TL ROHM Semiconductor	MOSFET N-CH 30V 4A TSMT3	77766
RSQ035P03TR ROHM Semiconductor	MOSFET P-CH 30V 3.5A TSMT6	249
RTF016N05FRATL ROHM Semiconductor	MOSFET N-CH 45V 1.6A TUMT3	3000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS