Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RF6E065BNTCR ROHM Semiconductor	MOSFET N-CH 30V 6.5A TUMT6	2483
R6015ANJTL ROHM Semiconductor	MOSFET N-CH 600V 15A LPTS	0
BSM180C12P2E202 ROHM Semiconductor	SICFET N-CH 1200V 204A MODULE	4
RRH075P03TB1 ROHM Semiconductor	MOSFET P-CH 30V 7.5A 8SOP	0
RUM002N02T2L ROHM Semiconductor	MOSFET N-CH 20V 200MA VMT3	0
R5019ANJTL ROHM Semiconductor	MOSFET N-CH 500V 19A LPTS	1000
RW1E015RPT2R ROHM Semiconductor	MOSFET P-CH 30V 1.5A WEMT6	11683
SCT3022ALHRC11 ROHM Semiconductor	SICFET N-CH 650V 93A TO247N	781
SCT3030AW7TL ROHM Semiconductor	TRANS SJT N-CH 650V 70A TO263-7	968
RRQ045P03TR ROHM Semiconductor	MOSFET P-CH 30V 4.5A TSMT6	8154
RYC002N05T316 ROHM Semiconductor	MOSFET N-CHANNEL 50V 200MA SST3	28740
RS1G120MNTB ROHM Semiconductor	MOSFET N-CH 40V 12A 8HSOP	1750
RS1G150MNTB ROHM Semiconductor	MOSFET N-CH 40V 15A 8HSOP	2230
RD3H080SPTL1 ROHM Semiconductor	MOSFET P-CH 45V 8A TO252	3634
RCJ200N20TL ROHM Semiconductor	MOSFET N-CH 200V 20A LPTS	698
RD3L08BGNTL ROHM Semiconductor	MOSFET N-CH 60V 80A TO252	2311
RSM002N06T2L ROHM Semiconductor	MOSFET N-CH 60V 250MA VMT3	7890
R6025JNZC8 ROHM Semiconductor	MOSFET N-CH 600V 25A TO3PF	13
RRL035P03TR ROHM Semiconductor	MOSFET P-CH 30V 3.5A TUMT6	66859
RTQ035P02HZGTR ROHM Semiconductor	MOSFET P-CH 20V 3.5A TSMT6	2495

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS