Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RU1L002SNTL ROHM Semiconductor	MOSFET N-CH 60V 250MA UMT3F	1917
RD3H045SPTL1 ROHM Semiconductor	MOSFET P-CH 45V 4.5A TO252	1531
R6507ENJTL ROHM Semiconductor	MOSFET N-CH 650V 7A LPTS	998
R6547KNZ4C13 ROHM Semiconductor	MOSFET N-CH 650V 47A TO247	16
RCX120N25 ROHM Semiconductor	MOSFET N-CH 250V 12A TO220FM	37
RS1E321GNTB1 ROHM Semiconductor	MOSFET N-CH 30V 32A/80A 8HSOP	2555
RQ3E160ADTB ROHM Semiconductor	MOSFET N-CH 30V 16A 8HSMT	4
SCT3022ALGC11 ROHM Semiconductor	SICFET N-CH 650V 93A TO247N	964
RCX100N25 ROHM Semiconductor	MOSFET N-CH 250V 10A TO220FM	89
RTR030N05HZGTL ROHM Semiconductor	MOSFET N-CH 45V 3A TSMT3	2393
RCD075N19TL ROHM Semiconductor	MOSFET N-CH 190V 7.5A CPT3	21
R5016ANX ROHM Semiconductor	MOSFET N-CH 500V 16A TO220FM	0
RSU002N06T106 ROHM Semiconductor	MOSFET N-CH 60V 250MA UMT3	0
RQ6E045BNTCR ROHM Semiconductor	MOSFET N-CH 30V 4.5A TSMT	2037
RQ3E150GNTB ROHM Semiconductor	MOSFET N-CH 30V 15A 8HSMT	680
R6009JND3TL1 ROHM Semiconductor	MOSFET N-CH 600V 9A TO252	2566
RQ5E035XNTCL ROHM Semiconductor	MOSFET N-CH 30V 3.5A TSMT3	1476
RSY200N05TL ROHM Semiconductor	MOSFET N-CH 45V 20A TCPT3	0
R6076KNZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 76A TO247	290
R6015KNX ROHM Semiconductor	MOSFET N-CH 600V 15A TO220FM	3238

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS