Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RSS065N06FRATB ROHM Semiconductor	MOSFET N-CH 60V 6.5A 8SOP	15
QS5U23TR ROHM Semiconductor	MOSFET P-CH 20V 1.5A TSMT5	0
R6018JNXC7G ROHM Semiconductor	MOSFET N-CH 600V 18A TO220FM	3980
R5005CNX ROHM Semiconductor	MOSFET N-CH 500V 5A TO220	446
US6U37TR ROHM Semiconductor	MOSFET N-CH 30V 1.5A TUMT6	1453
SCT2H12NYTB ROHM Semiconductor	SICFET N-CH 1700V 4A TO268	647
RE1L002SNTL ROHM Semiconductor	MOSFET N-CH 60V 250MA EMT3F	0
R5007ANJTL ROHM Semiconductor	MOSFET N-CH 500V 7A LPTS	0
RF4C050APTR ROHM Semiconductor	MOSFET P-CH 20V 10A HUML2020L8	0
R5016ANJTL ROHM Semiconductor	MOSFET N-CH 500V 16A LPTS	0
R6004JND3TL1 ROHM Semiconductor	MOSFET N-CH 600V 4A TO252	2510
RQ3E180AJTB ROHM Semiconductor	MOSFET N-CH 30V 18A/30A 8HSMT	3000
RV2C002UNT2L ROHM Semiconductor	MOSFET N-CH 20V 180MA DFN1006-3	0
RTM002P02T2L ROHM Semiconductor	MOSFET P-CH 20V 200MA VMT3	15506
RCJ700N20TL ROHM Semiconductor	MOSFET N-CH 200V 70A LPTS	748
SCT3160KW7TL ROHM Semiconductor	TRANS SJT N-CH 1200V 17A TO263-7	966
RZE002P02TL ROHM Semiconductor	MOSFET P-CH 20V 200MA EMT3	0
R6018JNJGTL ROHM Semiconductor	MOSFET N-CH 600V 18A LPTS	1043
RQ3G150GNTB ROHM Semiconductor	MOSFET N-CHANNEL 40V 39A 8HSMT	1358
R6007KNJTL ROHM Semiconductor	MOSFET N-CH 600V 7A LPTS	613

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS