Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6004ENDTL ROHM Semiconductor	MOSFET N-CH 600V 4A CPT3	2532
R6030MNX ROHM Semiconductor	MOSFET N-CH 600V 30A TO220FM	369
RSF010P05TL ROHM Semiconductor	MOSFET P-CH 45V 1A TUMT3	4332
RD3U060CNTL1 ROHM Semiconductor	MOSFET N-CH 250V 6A TO252	1864
R6020KNJTL ROHM Semiconductor	MOSFET N-CH 600V 20A LPTS	2943
RS1E280BNTB ROHM Semiconductor	MOSFET N-CH 30V 28A 8HSOP	114
RQ3E100GNTB ROHM Semiconductor	MOSFET N-CH 30V 10A 8HSMT	1649
RD3P175SNFRATL ROHM Semiconductor	MOSFET N-CH 100V 17.5A TO252	2368
R6011KND3TL1 ROHM Semiconductor	MOSFET N-CH 600V 11A TO252	48
R6047ENZ4C13 ROHM Semiconductor	MOSFET N-CH 600V 47A TO247	26
R6524KNJTL ROHM Semiconductor	MOSFET N-CH 650V 24A LPTS	100
RQ6E035SPTR ROHM Semiconductor	MOSFET P-CH 30V 3.5A TSMT6	2990
R6002END3TL1 ROHM Semiconductor	MOSFET N-CH 600V 1.7A TO252	2225
RSJ400N06TL ROHM Semiconductor	MOSFET N-CH 60V 40A LPTS	919
RW1E014SNT2R ROHM Semiconductor	MOSFET N-CH 30V 1.4A WEMT6	7791
RF4L055GNTCR ROHM Semiconductor	MOSFET N-CH 60V 5.5A HUML2020L8	3000
RF4E100AJTCR ROHM Semiconductor	MOSFET N-CH 30V 10A HUML2020L8	3002
RJK005N03T146 ROHM Semiconductor	MOSFET N-CH 30V 500MA SMT3	2820
RHK005N03FRAT146 ROHM Semiconductor	MOSFET N-CH 30V 500MA SMT3	2558
RUR020N02TL ROHM Semiconductor	MOSFET N-CH 20V 2A TSMT3	11303

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS