Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
RSD050N06TL ROHM Semiconductor	MOSFET N-CH 60V 5A CPT3	0
RCJ450N20TL ROHM Semiconductor	MOSFET N-CH 200V 45A LPTS	459
QS5U17TR ROHM Semiconductor	MOSFET N-CH 30V 2A TSMT5	4337
TT8U2TCR ROHM Semiconductor	MOSFET P-CH 20V 2.4A 8TSST	0
RQ6E030ATTCR ROHM Semiconductor	MOSFET P-CH 30V 3A TSMT6	2404
RSQ035P03HZGTR ROHM Semiconductor	MOSFET P-CH 30V 3.5A TSMT6	2853
RSD080N06TL ROHM Semiconductor	MOSFET N-CH 60V 8A CPT3	0
RSJ250P10TL ROHM Semiconductor	MOSFET P-CH 100V 25A LPTS	4790
RS3L045GNGZETB ROHM Semiconductor	MOSFET N-CH 60V 4.5A 8SOP	2480
RD3P100SNFRATL ROHM Semiconductor	MOSFET N-CH 100V 10A TO252	2348
RV3CA01ZPT2CL ROHM Semiconductor	MOSFET P-CH 20V 100MA VML0604	4559
R5205CNDTL ROHM Semiconductor	MOSFET N-CH 525V 5A CPT3	0
R6004JNJGTL ROHM Semiconductor	MOSFET N-CH 600V 4A LPTS	1095
RQ5C025TPTL ROHM Semiconductor	MOSFET P-CH 20V 2.5A TSMT3	2745
RSR020N06HZGTL ROHM Semiconductor	MOSFET N-CH 60V 2A TSMT3	2736
RTR030P02TL ROHM Semiconductor	MOSFET P-CH 20V 3A TSMT3	4963
RRH140P03TB1 ROHM Semiconductor	MOSFET P-CH 30V 14A 8SOP	0
RQ3E150MNTB1 ROHM Semiconductor	MOSFET N-CH 30V 15A 8HSMT	2355
RQ5C020TPTL ROHM Semiconductor	MOSFET P-CH 20V 2A TSMT3	3331
RSR020P05HZGTL ROHM Semiconductor	MOSFET P-CH 45V 2A TSMT3	1287

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS