Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
R6504KNJTL ROHM Semiconductor	MOSFET N-CH 650V 4A LPTS	100
ZDX130N50 ROHM Semiconductor	MOSFET N-CH 500V 13A TO220FM	0
RCJ100N25TL ROHM Semiconductor	MOSFET N-CH 250V 10A LPT	854
RSJ10HN06TL ROHM Semiconductor	MOSFET N-CH 60V 100A LPTS	1785
RXH125N03TB1 ROHM Semiconductor	MOSFET N-CH 30V 12.5A 8SOP	0
RU1E002SPTCL ROHM Semiconductor	MOSFET P-CH 30V 250MA UMT3F	9525
RQ3E180BNTB ROHM Semiconductor	MOSFET N-CHANNEL 30V 39A 8HSMT	240
RRL035P03FRATR ROHM Semiconductor	MOSFET P-CH 30V 3.5A TUMT6	237
QS5U28TR ROHM Semiconductor	MOSFET P-CH 20V 2A TSMT5	8674
RTF025N03FRATL ROHM Semiconductor	MOSFET N-CH 30V 2.5A TUMT3	100
RQ3E130BNTB ROHM Semiconductor	MOSFET N-CH 30V 13A 8HSMT	197
RQ6A045ZPTR ROHM Semiconductor	MOSFET P-CH 12V 4.5A TSMT6	2990
RE1C002UNTCL ROHM Semiconductor	MOSFET N-CH 20V 200MA EMT3F	0
RQ5L035GNTCL ROHM Semiconductor	MOSFET N-CH 60V 3.5A TSMT3	794
RQ5E030AJTCL ROHM Semiconductor	MOSFET N-CHANNEL 30V 3A TSMT3	5365
BSS84XHZGG2CR ROHM Semiconductor	MOSFET P-CH 60V 230MA DFN1010-3W	0
US5U1TR ROHM Semiconductor	MOSFET N-CH 30V 1.5A TUMT5	0
RQ3E100BNTB ROHM Semiconductor	MOSFET N-CH 30V 10A 8HSMT	9800
RQ6E050AJTCR ROHM Semiconductor	MOSFET N-CH 30V 5A TSMT6	2442
R5011FNJTL ROHM Semiconductor	MOSFET N-CH 500V 11A LPT	1965

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS