Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
SCT3120ALGC11 ROHM Semiconductor	SICFET N-CH 650V 21A TO247N	0
RCX510N25 ROHM Semiconductor	MOSFET N-CH 250V 51A TO-220FM	905
RRH100P03TB1 ROHM Semiconductor	MOSFET P-CH 30V 10A 8SOP	0
RCD041N25TL ROHM Semiconductor	MOSFET N-CH 250V 4A CPT3	330
R6003KND3TL1 ROHM Semiconductor	MOSFET N-CH 600V 3A TO252	2420
RT1E040RPTR ROHM Semiconductor	MOSFET P-CH 30V 4A 8TSST	1940
RD3P050SNTL1 ROHM Semiconductor	MOSFET N-CH 100V 5A TO252	881
RSJ300N10TL ROHM Semiconductor	MOSFET N-CH 100V 30A LPTS	0
R6030KNXC7 ROHM Semiconductor	MOSFET N-CH 600V 30A TO220FM	1722
RYM002N05T2CL ROHM Semiconductor	MOSFET N-CH 50V 200MA VMT3	78706
RQ5P010SNTL ROHM Semiconductor	MOSFET N-CH 100V 1A TSMT3	1829
RTR020P02TL ROHM Semiconductor	MOSFET P-CH 20V 2A TSMT3	10174
RTR020N05TL ROHM Semiconductor	MOSFET N-CH 45V 2A TSMT3	5924
R6004PND3FRATL ROHM Semiconductor	MOSFET N-CH 600V 4A TO252	2500
RUR040N02HZGTL ROHM Semiconductor	MOSFET N-CH 20V 4A TSMT3	2600
RTF010P02TL ROHM Semiconductor	MOSFET P-CH 20V 1A TUMT3	0
RZR025P01TL ROHM Semiconductor	MOSFET P-CH 12V 2.5A TSMT3	2495
RQ5A030APTL ROHM Semiconductor	MOSFET P-CH 12V 3A TSMT3	3197
2SK3065T100 ROHM Semiconductor	MOSFET N-CH 60V 2A MPT3	19293
RJ1G12BGNTLL ROHM Semiconductor	MOSFET N-CH 40V 120A LPTL	800

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS